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2SK4015
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI)
2SK4015
Switching Regulator Applications
* * * * Low drain-source ON-resistance: RDS (ON) = 0.60 (typ.) High forward transfer admittance: |Yfs| = 7.4 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 10 40 45 363 10 4.5 150 -55~150 A W mJ A mJ C C
1: Gate 2: Drain 3: Source
Unit V V V
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-67 2-10U1B
Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit C/W C/W 1
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 6.36 mH, IAR = 10 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 10 A - Duty < 1%, tw = 10 s = Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 50 ID = 5 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 10 V, ID = 5 A Min 30 600 2.0 3.7 Typ. 0.60 7.4 1500 15 180 22 50 36 180 42 23 19 Max 10 100 4.0 0.86 pF Unit A V A V V S

ns
RL = 40 VDD 200 V -

nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 170 0.6 Max 10 40 -1.7 Unit A A V ns C
Marking
K4015
Part No. (or abbreviation code) Lot No. A line indicates a lead (Pb)-free package or lead (Pb)-free finish.
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ID - VDS
10 COMMON SOURCE Tc = 25C PULSE TEST 10 8 7 6 20 6.3 16 10 8 7 6.8 6.6 12 6.3 8 6 5.7 4 5.4 VGS = 5 V 0 0 2 4 6 8 10 0 0 10 20 30 40 50
ID - VDS
COMMON SOURCE Tc = 25C PULSE TEST
DRAIN CURRENT ID (A)
6 5.7 4 5.4 2 VGS = 5 V
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
8
DRAIN-SOURCE VOLTAGE VDS (V)
ID - VGS
16 COMMON SOURCE VDS = 10 V PULSE TEST 10 Tc = -55C 25
VDS - VGS
COMMON SOURCE Tc = 25 PULSE TEST
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
8
12
6
ID = 10 A
8
100
4
4
5 2 2 0 0 4 8 12 16 20
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS
(V)
GATE-SOURCE VOLTAGE VGS
(V)
|Yfs| - ID
100 10 COMMON SOURCE VDS = 10 V PULSE TEST
RDS (ON) - ID
COMMON SOURCE Tc = 25C PULSE TEST
FORWARD TRANSFER ADMITTANCE Yfs (S)
10
Tc = -55C 25 100
DRAIN-SOURCE ON-RESISTANCE RDS (ON) ()
1 VGS = 10 V
1
0.1 0. 1
1
10
100
0.1 0.1
1
10
100
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
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RDS (ON) - Tc
2.0 COMMON SOURCE VGS = 10 V PULSE TEST ID = 10 A 1.2 2 5 0.8 100
IDR - VDS
COMMON SOURCE Tc = 25C PULSE TEST
DRAIN-SOURCE ON-RESISTANCE RDS (ON) ()
1.6
DRAIN REVERSE CURRENT IDR (A)
10
1
5
10
0.4
0 -80
-40
0
40
80
120
160
0.1
3 0 0.4
1
VGS = 0 V 0.8 1.2 1.6
CASE TEMPERATURE
Tc (C)
DRAIN-SOURCE VOLTAGE VDS (V)
C - VDS
10000 5
Vth - Tc
Vth (V)
COMMON SOURCE VDS = 10 V ID = 1 mA
(pF)
1000
Ciss
4
GATE THRESHOLD VOLTAGE
CAPACITANCE C
3
100 Coss
2
10
Crss COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 10 100
1
1 0.1
0 -80
-40
0
40
80
120
160
DRAIN-SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE
Tc (C)
PD - Tc
50 600
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
COMMON SOURCE ID = 10 A Tc = 25C PULSE TEST VDS VDD = 100 V 200 V 400 V 300 VGS 5 15
PD (W)
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN POWER DISSIPATION
400
10
30
7.5
20
200
10
100
2.5
0 0
40
80
120
160
200
0 0
20
40
60
0 80
CASE TEMPERATURE
Tc (C)
TOTAL GATE CHARGE Qg (nC)
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GATE-SOURCE VOLTAGE VGS
40
500
12.5
(V)
2SK4015
rth - tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)
10
1
Duty = 0.5 Duty=0.5 0.2
0.1
0.1 0.05 0.02 PDM t
0.01 0.01 SINGLE PULSE
T Duty = t/T Rth (ch-c) = 2.78C/W 10 100 1 10
0.001 10
100
1
PULSE WIDTH
tw (s)
SAFE OPERATING AREA
100 ID max (PULSED) * 100 s * ID max (CONTINUOUS) * 400 500
EAS - Tch
10
AVALANCHE ENERGY EAS (mJ)
(A)
300
DRAIN CURRENT ID
1 ms * DC OPERATION Tc = 25C
200
1
100
0.1
* SINGLE NONREPETITIVE PULSE Tc = 25C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN
0 25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL) Tch (C)
VDSS max 100 1000
0.01 1
TEMPERATURE.
10
15 V -15 V
BVDSS IAR VDD VDS
DRAIN-SOURCE VOLTAGE
VDS
(V)
TEST CIRCUIT RG = 25 VDD = 90 V, L = 6.36 mH
WAVEFORM
AS =
1 B VDSS L I2 B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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